Q1 A transistor has hfe=100, hie=2kΩ, hoe=0.005mmhos, hre=0. Find the output impedance if the lad resistance is 5kΩ.

Difficulty - Medium || Topic - Electronic Devices and Circuits

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Q2 A CE amplifier when bypassed with a capacitor at the emitter resistance has

Difficulty - Medium || Topic - Electronic Devices and Circuits

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Q3 A transistor has hie =2kΩ, hoe=25µmhos and hfe=60 with an unbypassed emitter resistor Re=1kΩ. What will be the input resistance and output resistance?

Difficulty - Hard || Topic - Electronic Devices and Circuits

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Q4 A transistor has hie =1KΩ and hfe=60 with an bypassed emitter resistor Re=1kΩ. What will be the input resistance and output resistance?

Difficulty - Medium || Topic - Electronic Devices and Circuits

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Q5 Which of the following acts as a buffer?

Difficulty - Medium || Topic - Electronic Devices and Circuits

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Q6 Which of the following is true?

Difficulty - Hard || Topic - Electronic Devices and Circuits

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Q7 In an NPN silicon transistor, α=0.995, IE=10mA and leakage current ICBO=0.5µA. Determine ICEO.

Difficulty - Medium || Topic - Electronic Devices and Circuits

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Q8 In CB configuration, the value of α=0.98A. A voltage drop of 4.9V is obtained across the resistor of 5KΩ when connected in collector circuit. Find the base current.

Difficulty - Hard || Topic - Electronic Devices and Circuits

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Q9 Which states get filled in the conduction band when the donor-type impurity is added to a crystal?

Difficulty - Easy || Topic - Electronic Devices and Circuits

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Q10 Which of the following expression represent the correct formulae for calculating the exact position of the Fermi level for p-type material?

Difficulty - Medium || Topic - Electronic Devices and Circuits

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Q11 Where will be the position of the Fermi level of the n-type material when ND=NA?

Difficulty - Hard || Topic - Electronic Devices and Circuits