The 2N2222A is a common NPN Bipolar Junction Transistor (BJT) used for general-purpose low-power amplifying or switching actions. As it is an NPN transistor, socollector and emitter will be left open when no signal is at the base, and when a signal is provided to the base terminal, then the emitter and collector will be closed i.e. they will start conducting as BJT will operate in Saturation Region. 2N2222A has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. To bias a transistor, we have to supply current to the base pin, this current (IB) should be limited to 5mA. It can be used in switching applications with a current up to 800mA, in speed control of motors, also it can be used in Darlington Pair.
SPECIFICATIONS
- Bi-Polar high current NPN Transistor
- DC Current Gain (hFE)is 100 to 300
- Continuous Collector current (IC) is 800mA
- Emitter Base Voltage (VBE) is 6V
- Collector-Emitter Voltage (VCE) is 40V
- Base Current (IB) is 5mA maximum
- Available in To-92 Package
- Rise Time 25nSec, Fall Time 60nSec
- Dimensions = Body Length: ~4.7 mm (0.185 in) Body Width: ~4.0 mm (0.157 in) Body Height/Thickness: ~3.7 mm (0.146 in)
ADDITIONAL RESOURCES
PACKAGE CONTENTS
1×2N2222A NPN Switching Transistor